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Si1025X
Vishay Siliconix
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V DS
V GS(th)
V GS = 0 V, I D = - 10 μA
V DS = V GS , I D = - 0.25 mA
- 60
-1
- 3.0
V
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 10 V
V DS = 0 V, V GS = ± 5 V
V DS = - 50 V, V GS = 0 V
V DS = - 50 V, V GS = 0 V, T J = 85 °C
V DS = - 10 V, V GS = - 4.5 V
V DS = - 10 V, V GS = - 10 V
- 50
- 600
± 200
± 100
- 25
- 250
nA
mA
V GS = - 4.5 V, I D = - 25 mA
8
Drain-Source
On-Resistance a
R DS(on)
V GS = - 10 V, I D = - 500 mA
4
?
V GS = - 10 V, I D = - 500 mA, T J = 125 °C
6
Forward Transconductance a
g fs
V DS = - 10 V, I D = - 100 mA
100
mS
Diode Forward
Voltage a
V SD
I S = - 200 mA, V GS = 0 V
- 1.4
V
Dynamic b
Total Gate Charge
Q g
1.7
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q gs
Q gd
C iss
C oss
C rss
V DS = - 30 V, V GS = - 15 V, I D ? - 500 mA
V DS = - 25 V, V GS = 0 V, f = 1 MHz
0.26
0.46
23
10
5
nC
pF
Switching b, c
Turn-On Time
Turn-Off Time
t ON
t OFF
V DD = - 25 V, R L = 150 ? , I D ? - 165 mA,
V GEN = - 10 V, R g = 10 ?
20
35
ns
Notes:
a. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (T A = 25 °C, unless otherwise noted)
1.0
1200
V GS = 10 V
7 V
T J = - 55 °C
0. 8
0.6
8V
6 V
900
25 °C
125 °C
600
0.4
5 V
300
0.2
4 V
0.0
0
0
1
2
3
4
5
0
2
4
6
8
10
www.vishay.com
2
V DS - Drain-to-So u rce V oltage ( V )
Output Characteristics
V GS - Gate-to-So u rce V oltage ( V )
Transfer Characteristics
Document Number: 71433
S10-2432-Rev. C, 25-Oct-10
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